Low-frequency intensity noise in semiconductor lasers

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise result...

Intensity and phase noise in microcavity surface-emitting semiconductor lasers

The noise characteristics of vertical-cavity surface-emitting (VCSE) lasers are studied by using the Langevin rate equations modified suitably to include the enhanced spontaneous emission occurring in such microcavity lasers. The intensity and frequency noise spectra show the effects induced by suppression of relaxation oscillations. However, such a suppression depends on the output power as we...

Noise and frequency chirping in external-cavity semiconductor lasers.

The noise spectra and frequency chirping of semiconductor lasers in the presence of arbitrary amounts of optical feedback are analyzed. Short external cavities with strong optical feedback are found to reduce the noise dramatically in semiconductor lasers, especially in the high-frequency regime. Frequency chirping is shown to be closely related to the nonlinear gain effect.

Amplitude or Intensity Stability in Semiconductor Lasers

A Nonfundamental Theory of Low-Frequency Noise in Semiconductor Devices

A general low-frequency noise theory based on the fluctuation in the number of carriers is presented. In this theory, the low-frequency noise is attributed to the traps within the bandgap of a semiconductor, which are the sources of the generation-recombination noise. The cumulative effect of the generation-recombination noise from each trap center generates a 1 type noise. It is shown that in ...